The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2005
Filed:
Jan. 22, 2002
Kyoichiro Asayama, Higashiyamato, JP;
Yasuhiro Mitsui, Fuchu, JP;
Fumiko Arakawa, Kodaira, JP;
Shiro Kamohara, Hachioji, JP;
Yuzuru Ohji, Hinode, JP;
Kyoichiro Asayama, Higashiyamato, JP;
Yasuhiro Mitsui, Fuchu, JP;
Fumiko Arakawa, Kodaira, JP;
Shiro Kamohara, Hachioji, JP;
Yuzuru Ohji, Hinode, JP;
Renesas Technology Corp., Tokyo, JP;
Abstract
Disclosed is a technique capable of improving a yield of a semiconductor device by measuring a plurality of TEGs arranged in a scribe region. A first electrode pad connected to each terminal of a TEG is formed as a rectangular, minute, isolated pattern having a side length of about 0.5 μm or shorter and constituted of an uppermost layer wiring on a semiconductor substrate, and therefore, a great number of TEGs can be laid in a first scribe region. The characteristic evaluation or the failure analysis is performed by contacting a nanoprobe having a tip radius of curvature of 0.05 μm to 0.8 μm to the first electrode pad.