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For the Inventor, By the Inventor

Yokohama, Japan

Shih-Chung Lee

USPTO Granted Patents = 35 


Average Co-Inventor Count = 2.6

ph-index = 13

Forward Citations = 373(Granted Patents)


Location History:

  • Kanagawa, JP (2008)
  • Katsuradaiminami, JP (2012)
  • Yokohama, JO (2016)
  • Yokohama, JP (2008 - 2023)
  • Yokohama Kanagawa, JP (2023)

Company Filing History:

goldMedal25 out of 4,549 
 
Sandisk Technologies Inc.
 patents
silverMedal10 out of 1,339 
 
Sandisk Corporation
 patents

Years Active: 2008-2023

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35 patents (USPTO):Explore Patents
1. 11817157 - Systems and methods for detecting erratic programming in a memory system (2023-11-14),
2. 11562797 - Non-linear temperature compensation for wider range operation temperature products (2023-01-24),
3. 11397635 - Block quality classification at testing for non-volatile memory, and multiple bad block flags for product diversity (2022-07-26),
4. 10373697 - Programming dummy memory cells in erase operation to reduce threshold voltage downshift for select gate transistors (2019-08-06),
5. 9548130 - Non-volatile memory with prior state sensing (2017-01-17),
6. 9543023 - Partial block erase for block programming in non-volatile memory (2017-01-10),
7. RE46264 - Verification process for non-volatile storage (2017-01-02),
8. 9343164 - Compensating source side resistance versus word line (2016-05-17),
9. 9343160 - Erase verify in non-volatile memory (2016-05-17),
10. RE45910 - Programming non-volatile storage including reducing impact from other memory cells (2016-02-29),
11. 9236139 - Reduced current program verify in non-volatile memory (2016-01-12),
12. 9214240 - Dynamic erase depth for improved endurance of non-volatile memory (2015-12-15),
13. 8995211 - Program condition dependent bit line charge rate (2015-03-31),
14. 8958249 - Partitioned erase and erase verification in non-volatile memory (2015-02-17),
15. 8942043 - Non-volatile storage with process that reduces read disturb on end wordlines (2015-01-27),

Title: Innovator Spotlight: Shih-Chung Lee

Introduction

Shih-Chung Lee, based in Yokohama, Japan, has made significant contributions to the field of non-volatile memory systems. With an impressive portfolio of 35 patents, Lee continues to push the boundaries of innovation in memory technology.

Latest Patents

Lee’s latest patents include groundbreaking systems and methods for detecting erratic programming in a memory system. This innovation features a storage device equipped with non-volatile memory and control circuitry that interfaces with an array of memory cells arranged in multiple word lines. The control circuitry adeptly programs these memory cells through a series of programming loops, which involve applying a programming pulse and a verify pulse to ensure data integrity across various states.

Another of his recent patents covers methods for non-linear temperature compensation, allowing for broader operational temperature ranges of non-volatile storage elements. This patent introduces techniques for providing precise temperature compensation tailored to the conditions faced by the storage elements, enhancing their performance and reliability.

Career Highlights

Throughout his career, Shih-Chung Lee has been associated with well-known companies such as SanDisk Technologies Inc. and SanDisk Corporation. His tenure at these organizations has allowed him to refine his expertise and contribute to significant advancements in memory technology.

Collaborations

Lee has worked alongside accomplished professionals, including Gerrit Jan Hemink and Ken Oowada. These collaborations have not only enriched his understanding of memory systems but have also facilitated the exchange of ideas that push technological innovations further.

Conclusion

Shih-Chung Lee exemplifies the spirit of innovation within the field of memory systems. His pioneering patents and professional collaborations underscore his role as a key inventor, making notable strides in non-volatile memory technology. As the demand for advanced memory solutions continues to grow, Lee’s contributions will surely pave the way for future innovations.

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