The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 14, 2023

Filed:

Jun. 14, 2021
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Ming Wang, Shanghai, CN;

Liang Li, Shanghai, CN;

Shih-Chung Lee, Yokohama, JP;

Assignee:

SanDisk Technologies LLC, Addison, TX (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/30 (2006.01); G11C 16/26 (2006.01); G11C 16/08 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3459 (2013.01); G11C 16/08 (2013.01); G11C 16/102 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01); G11C 16/3404 (2013.01);
Abstract

The storage device that includes a non-volatile memory with a control circuitry that is communicatively coupled to an array of memory cells that are arranged in a plurality of word lines. The control circuitry is configured to program the memory cells in a plurality of programming loops. The programming loops include applying a programming pulse to a selected word line of the plurality of word lines. The programming loops also include applying a verify pulse Vto the selected word line to simultaneously verify a lower tail of the memory cells being programmed to a data state N and an upper tail of the memory cells that have been programmed to a data state N−1. The data state N−1 has a lower voltage threshold than the data state N.


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