The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 29, 2016

Filed:

May. 28, 2014
Applicant:

Sandisk Technologies Inc., Plano, TX (US);

Inventors:

Yingda Dong, San Jose, CA (US);

Shih-Chung Lee, Yokohama, JP;

Ken Oowada, Kanagawa, JP;

Assignee:

SANDISK TECHNOLOGIES INC., Plano, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2005.12); G11C 16/34 (2005.12); G11C 11/56 (2005.12);
U.S. Cl.
CPC ...
G11C 16/3427 (2012.12); G11C 11/5628 (2012.12); G11C 11/5642 (2012.12); G11C 16/3459 (2012.12); G11C 2211/5621 (2012.12); G11C 2211/5622 (2012.12);
Abstract

A system for programming non-volatile storage is proposed that reduces the impact of interference from the boosting of neighbors. Memory cells are divided into two or more groups. In one example, the memory cells are divided into odd and even memory cells; however, other groupings can also be used. Prior to a first trigger, a first group of memory cells are programmed together with a second group of memory cells using a programming signal that increases over time. Subsequent to the first trigger and prior to a second trigger, the first group of memory cells are programmed separately from the second group of memory cells using a programming signal that has been lowered in magnitude in response to the first trigger. Subsequent to the second trigger, the first group of memory cells are programmed together with the second group of memory cells with the programming signal being raised in response to the second trigger. Before and after both triggers, the first group of memory cells are verified together with the second group of memory cells.


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