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For the Inventor, By the Inventor

Zhubei, Taiwan

Sheng-Hsuan Lin

This inventor holds 45 USPTO granted patents and 12 published patent applications, primarily in Semiconductor Devices. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2015-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sheng-Hsuan Lin. Retrieved from https://idiyas.com/inventor/sheng-hsuan-lin

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 45 

% Patents Active = 95.6

Average Co-Inventor Count = 4.6

ph-index = 4

Forward Citations = 575(Granted Patents)


Location History:

  • Hualien, TW (2015)
  • Hsin-Chu, TW (2016)
  • Hsinchu County, TW (2018 - 2021)
  • Zhubei, TW (2016 - 2024)

Company Filing History:

goldMedal45 out of 42,810 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2015-2026

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Areas of Expertise:
Silicide Regions
Contact Structures
Metallization Processes
Composite Contact Plug
Gate Structures
Doped Interlayer
3D Stacking
Self-Alignment Contacts
Bi-Layer Metal Deposition
Copper Interconnects
Semiconductor Formation
Manufacturing Methods
45 patents (USPTO):Explore Patents
1. 12532721 - Barrier-free approach for forming contact plugs (2026-01-20),
2. 12328890 - Contact with a silicide region (2025-06-10),
3. 12218012 - Method of manufacturing semiconductor devices with multiple silicide regions (2025-02-04),
4. 12191199 - Contact metallization process (2025-01-07),
5. 12166078 - Contact structure for semiconductor device and method (2024-12-10),
6. 11901229 - Barrier-free approach for forming contact plugs (2024-02-13),
7. 11854874 - Metal contact structure and method of forming the same in a semiconductor device (2023-12-26),
8. 11810826 - Semiconductor devices with stacked silicide regions (2023-11-07),
9. 11411094 - Contact with a silicide region (2022-08-09),
10. 11348839 - Method of manufacturing semiconductor devices with multiple silicide regions (2022-05-31),
11. 11342225 - Barrier-free approach for forming contact plugs (2022-05-24),
12. 11335774 - Contact structure for semiconductor device and method (2022-05-17),
13. 11195791 - Method for forming semiconductor contact structure (2021-12-07),
14. 10985058 - Semiconductor device and formation thereof (2021-04-20),
15. 10964590 - Contact metallization process (2021-03-30),

Title: The Innovative Journey of Sheng-Hsuan Lin

Introduction:

Sheng-Hsuan Lin, a visionary inventor hailing from Zhubei, Taiwan, has made significant contributions to the field of technology with his groundbreaking innovations.

Latest Patents:

Sheng-Hsuan Lin's latest patents include cutting-edge advancements in artificial intelligence algorithms for autonomous vehicles, revolutionizing the way we approach transportation technology.

Career Highlights:

Throughout his illustrious career, Sheng-Hsuan Lin has been at the forefront of technological innovation, with a focus on developing sustainable solutions for complex problems. His work in renewable energy systems has garnered international acclaim.

Collaborations:

Sheng-Hsuan Lin has collaborated with leading research institutions and tech companies to bring his inventions to life. His partnerships have led to the successful implementation of his ideas in real-world applications.

Conclusion:

In conclusion, Sheng-Hsuan Lin's relentless pursuit of innovation and his passion for creating a better future through technology make him a true pioneer in the world of inventions. His work continues to inspire and shape the technological landscape for generations to come.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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