The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 30, 2021
Filed:
Apr. 30, 2018
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Tien-Pei Chou, Hsinchu, TW;
Ken-Yu Chang, Hsinchu, TW;
Sheng-Hsuan Lin, Hsinchu County, TW;
Yueh-Ching Pai, Taichung, TW;
Yu-Ting Lin, Tainan, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
The present disclosure describes a method to a metallization process with improved gap fill properties. The method includes forming a contact opening in an oxide, forming a barrier layer in the contact opening, forming a liner layer on the barrier layer, and forming a first metal layer on the liner layer to partially fill the contact opening. The method further includes forming a second metal layer on the first metal layer to fill the contact opening, where forming the second metal layer includes sputter depositing the second metal layer with a first radio frequency (RF) power and a direct current power, as well as reflowing the second metal layer with a second RF power.