The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 07, 2021
Filed:
Dec. 09, 2019
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yu-Wen Cheng, Tainan, TW;
Wei-Yip Loh, Hsinchu, TW;
Yu-Hsiang Liao, Hsinchu, TW;
Sheng-Hsuan Lin, Zhubei, TW;
Hong-Mao Lee, Hsinchu, TW;
Chun-I Tsai, Hsinchu, TW;
Ken-Yu Chang, Hsinchu, TW;
Wei-Jung Lin, Hsinchu, TW;
Chih-Wei Chang, Hsinchu, TW;
Ming-Hsing Tsai, Chu-Pei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor contact structure is provided. The method includes depositing a dielectric layer over a substrate. The method also includes etching the dielectric layer to expose a sidewall of the dielectric layer and a top surface of the substrate. In addition, the method includes forming a silicide region in the substrate. The method also includes applying a plasma treatment to the sidewall of the dielectric layer and the top surface of the substrate to form a nitridation region adjacent to a periphery of the silicide region. The method further includes depositing an adhesion layer on the dielectric layer and the silicide region.