The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 10, 2025
Filed:
Jul. 20, 2022
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Yu-Wen Cheng, Tainan, TW;
Cheng-Tung Lin, Jhudong Township, TW;
Chih-Wei Chang, Hsinchu, TW;
Hong-Mao Lee, Hsinchu, TW;
Ming-Hsing Tsai, Chu-Pei, TW;
Sheng-Hsuan Lin, Zhubei, TW;
Wei-Jung Lin, Hsinchu, TW;
Yan-Ming Tsai, Toufen Township, TW;
Yu-Shiuan Wang, Taipei, TW;
Hung-Hsu Chen, Tainan, TW;
Wei-Yip Loh, Hsinchu, TW;
Ya-Yi Cheng, Taichung, TW;
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Abstract
Embodiments disclosed herein relate generally to forming an effective metal diffusion barrier in sidewalls of epitaxy source/drain regions. In an embodiment, a structure includes an active area having a source/drain region on a substrate, a dielectric layer over the active area and having a sidewall aligned with the sidewall of the source/drain region, and a conductive feature along the sidewall of the dielectric layer to the source/drain region. The source/drain region has a sidewall and a lateral surface extending laterally from the sidewall of the source/drain region, and the source/drain region further includes a nitrided region extending laterally from the sidewall of the source/drain region into the source/drain region. The conductive feature includes a silicide region along the lateral surface of the source/drain region and along at least a portion of the sidewall of the source/drain region.