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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11810826 B1

PDFFull Text
Date of Patent:
Nov. 07, 2023

Filed:

May. 27, 2022

Semiconductor devices with stacked silicide regions

Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Wei-Yip Loh, Hsinchu, TW;

Yan-Ming Tsai, Toufen Township, TW;

Hung-Hsu Chen, Tainan, TW;

Chih-Wei Chang, Hsinchu, TW;

Sheng-Hsuan Lin, Zhubei, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Slater Matsil, LLP

Primary Examiner:

Lex H Malsawma

Int. Cl.
CPC ...
H01L 29/08 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 27/092 (2006.01); H01L 29/45 (2006.01); H01L 21/285 (2006.01); H01L 21/3065 (2006.01); H01L 21/762 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01); H01L 21/266 (2006.01); H01L 29/78 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823814 (2013.01); H01L 21/28518 (2013.01); H01L 27/0924 (2013.01); H01L 29/0847 (2013.01); H01L 29/45 (2013.01); H01L 29/665 (2013.01); H01L 21/266 (2013.01); H01L 21/3065 (2013.01); H01L 21/31053 (2013.01); H01L 21/31111 (2013.01); H01L 21/32135 (2013.01); H01L 21/76224 (2013.01); H01L 21/823821 (2013.01); H01L 21/823828 (2013.01); H01L 21/823864 (2013.01); H01L 21/823878 (2013.01); H01L 29/66545 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01);
Abstract

A semiconductor device with multiple silicide regions is provided. In embodiments a first silicide precursor and a second silicide precursor are deposited on a source/drain region. A first silicide with a first phase is formed, and the second silicide precursor is insoluble within the first phase of the first silicide. The first phase of the first silicide is modified to a second phase of the first silicide, and the second silicide precursor being soluble within the second phase of the first silicide. A second silicide is formed with the second silicide precursor and the second phase of the first silicide.

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