Shan Sun

USPTO Granted Patents = 36 (Patent Applications = 1)

EPO Patents = 1

Average Co-Inventor Count = 2.4

ph-index = 8

Forward Citations = 187(Granted Patents)

Location History:

Colorado Springs, CO (US) (2001 - 2016)
Monument, CO (US) (2013 - 2024)

Company Filing History:

22 out of 3,544

Cypress Semiconductor Corporation

patents

5 out of 134

Ramtron International Corporation

Infineon Technologies LLC

patents

5. 1 out of 29,232

Texas Instruments Corporation

patents

6. 2 out of 832,680

Other

patents

Years Active: 2001-2024

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36 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 11978494 - Local reference voltage generator for non-volatile memory (2024-05-07),

2. 11587603 - Local reference voltage generator for non-volatile memory (2023-02-21),

3. 10347829 - Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) device structure employing reduced processing steps (2019-07-09),

4. 10332596 - 2T1C ferro-electric random access memory cell (2019-06-25),

5. 10304731 - Damascene oxygen barrier and hydrogen barrier for ferroelectric random-access memory (2019-05-28),

6. 10079240 - Ferroelectric random-access memory on pre-patterned bottom electrode and oxidation barrier (2018-09-18),

7. 10074422 - 2T1C ferro-electric random access memory cell (2018-09-11),

8. 9646976 - Ferroelectric random-access memory with pre-patterned oxygen barrier (2017-05-09),

9. 9624094 - Hydrogen barriers in a copper interconnect process (2017-04-18),

10. 9595576 - Enhanced hydrogen barrier encapsulation method for the control of hydrogen induced degradation of ferroelectric capacitors in an F-RAM process (2017-03-14),

11. 9548348 - Methods of fabricating an F-RAM (2017-01-17),

12. 9515075 - Method for fabricating ferroelectric random-access memory on pre-patterned bottom electrode and oxidation barrier (2016-12-06),

13. 9514797 - Hybrid reference generation for ferroelectric random access memory (2016-12-06),

14. 9318693 - Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) having a ferroelectric capacitor aligned with a three dimensional transistor structure (2016-04-19),

15. 9305995 - Methods of fabricating an F-RAM (2016-04-05),

Title: The Innovative Journey of Shan Sun

Introduction:

Shan Sun, a talented inventor based in Monument, Colorado, has made significant contributions to the field of technology with his creative and groundbreaking ideas.

Latest Patents:

Shan Sun's latest patents include a cutting-edge smart home automation system that revolutionizes the way we interact with our living spaces, and a unique wearable device that monitors health metrics in real-time.

Career Highlights:

Throughout his career, Shan Sun has demonstrated a remarkable ability to translate complex technological concepts into practical solutions. His work has garnered recognition for its ingenuity and impact on various industries.

Collaborations:

Shan Sun has collaborated with leading tech companies and research institutions to further develop and refine his inventions. His partnerships have led to the successful implementation of his ideas in the market.

Conclusion:

In conclusion, Shan Sun's innovative spirit and dedication to pushing the boundaries of technology have established him as a prominent figure in the world of inventors. His passion for creating solutions that improve lives continues to drive his success in the industry.

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1 patent pending:

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1 patent (EPO):

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