The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 14, 2017
Filed:
Oct. 14, 2014
Applicant:
Cypress Semiconductor Corporation, San Jose, CA (US);
Inventors:
Shan Sun, Monument, CO (US);
Tom E. Davenport, Denver, CO (US);
Assignee:
Cypress Semiconductor Corporation, San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/29 (2006.01); H01L 49/02 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 28/40 (2013.01); H01L 23/291 (2013.01); H01L 27/11502 (2013.01); H01L 27/11507 (2013.01); H01L 28/57 (2013.01); H01L 2924/0002 (2013.01);
Abstract
An encapsulated ferroelectric capacitor or ferroelectric memory cell includes encapsulation materials adjacent to a ferroelectric capacitor, a ferroelectric oxide (FEO) layer over the encapsulated ferroelectric capacitor, and an FEO encapsulation layer over the ferroelectric oxide to provide protection from hydrogen induced degradation.