Tom E Davenport

Title: Innovations of Tom E Davenport

Introduction

Tom E Davenport is a notable inventor based in Denver, CO (US). He has made significant contributions to the field of ferroelectric random access memory (F-RAM) technology. With a total of 3 patents, his work has advanced the understanding and application of memory devices.

Latest Patents

Davenport's latest patents include a method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) device structure employing reduced processing steps. This method describes a process for creating a non-volatile F-RAM device with fewer masking and etching steps. It involves forming an opening in an insulating layer over a substrate surface, creating first spacers on the sidewalls of the opening, and forming a conductive layer on the exposed surface. Additionally, he has developed an enhanced hydrogen barrier encapsulation method for controlling hydrogen-induced degradation of ferroelectric capacitors in an F-RAM process. This encapsulation method includes materials adjacent to a ferroelectric capacitor, providing protection from degradation.

Career Highlights

Throughout his career, Davenport has worked with various companies, including Cypress Semiconductor Corporation. His innovative approaches have led to advancements in memory technology, particularly in the realm of ferroelectric capacitors.

Collaborations

Davenport has collaborated with notable individuals such as Shan Sun and Thomas Domokos Hadnagy. These partnerships have contributed to the success of his projects and the development of new technologies.

Conclusion

Tom E Davenport's contributions to the field of ferroelectric memory technology are significant. His innovative patents and collaborations have paved the way for advancements in memory devices, showcasing his expertise and dedication to the field.