Cypress Semiconductor Corporation

Other

Tom E Davenport

Shan Sun

John Edward Cronin

Katsumi Ogi

Hiroto Uchida

Tsutomu Atsuki

Thomas Domokos Hadnagy

Kensuke Kegeyama

Gakuji Uozumi

A method for fabricating a non-volatile, ferroelectric random access memory (F-RAM) device with a reduced number of masking and etching steps is described. In one embodiment, the method includes forming an opening in an insulating layer over a surface of a substrate to expose a portion of the surface, and forming first spacers on sidewalls of the opening. A conductive layer is formed on the portion of the surface exposed in the opening and separated from the first spacers on the sidewalls of the opening by a gap therebetween. A bottom electrode of a ferroelectric capacitor is formed over the conductive layer and in the gap laterally of the conductive layer, a ferroelectric dielectric formed on the bottom electrode between the first spacers, and a top electrode formed on the ferroelectric dielectric.

Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) device structure employing reduced processing steps

An encapsulated ferroelectric capacitor or ferroelectric memory cell includes encapsulation materials adjacent to a ferroelectric capacitor, a ferroelectric oxide (FEO) layer over the encapsulated ferroelectric capacitor, and an FEO encapsulation layer over the ferroelectric oxide to provide protection from hydrogen induced degradation.

Enhanced hydrogen barrier encapsulation method for the control of hydrogen induced degradation of ferroelectric capacitors in an F-RAM process

The ferroelectric thin film is formed from a liquid composition by the sol-gel processing which has a large amount of polarization, remarkably improved retention and imprint characteristics as compared with a PZT, minute grains and fine film quality, homogeneous electrical properties, and low leakage currents and which is suited for nonvolatile memories. The ferroelectric thin film of the present invention comprising a metal oxide represented by the general formula: (Pb,Ca,Sr,La,)(Zr,Ti,)O,, wherein 0.9&lE;V&lE;1.3, 0&lE;W&lE;0.1, 0&lE;X&lE;0.1, 0<Y&lE;0.1, 0<Z&lE;0.9 and at least either of W and X is not 0, is formed from a solution where thermally decomposable organometallic compounds of respective metals constituting said metal oxide, hydrolyzable organometallic compounds thereof, and partially hydrolyzed products and/or polycondensation products of said hydrolyzable organometallic compounds are dissolved in an organic solvent in such a proportion as to provide the metal atom ratio represented by the above-mentioned formula.

Ferroelectric thin films and solutions: compositions

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Denver, CO, United States of America

Tom E Davenport