The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Dec. 15, 2020
Infineon Technologies Llc, San Jose, CA (US);
Edwin Kim, Colorado Springs, CO (US);
Alan DeVilbiss, Colorado Springs, CO (US);
Kapil Jain, Colorado Springs, CO (US);
Patrick O'Connell, Colorado Springs, CO (US);
Franklin Brodsky, Colorado Springs, CO (US);
Shan Sun, Monument, CO (US);
Fan Chu, Colorado Springs, CO (US);
INFINEON TECHNOLOGIES LLC, San Jose, CA (US);
Abstract
A memory device including a reference voltage (V) generator and method for operating the same to improve memory sensing margin, and extend operational temperature range and life of the device are disclosed. Generally, the device further includes an array of non-volatile memory cells divided into a plurality of blocks, a sensing circuit coupled to the array to receive and compare memory signals therefrom to the Vto read data from the cells. The Local reference voltage generator is configured to provide one of a number of reference voltages to the sensing circuit based on which of the blocks is being read. The array can be divided based on row and column addresses of cells in the blocks. Where the cells include 1T1C ferroelectric random access memory (F-RAM) cells, and the reference voltages are selected based on a lowest P-term or highest U-term of the cells in the block being read.