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For the Inventor, By the Inventor

Suwon, South Korea

Seung-Beom Yoon

This inventor holds 39 USPTO granted patents, primarily in Non-Volatile Memory. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2006-2013.

USPTO Granted Patents = 39

% Patents Active = 17.9

Average Co-Inventor Count = 3.7

ph-index = 6

Forward Citations = 407(Granted Patents)


Inventors with similar research interests:


Location History:

  • Suwon, KR (2006 - 2007)
  • Gyeonggi-do, KR (2006 - 2009)
  • Suwon-si, KR (2006 - 2013)

Company Filing History:

goldMedal39 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2006-2013

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Areas of Expertise:
Non-Volatile Memory
EEPROM Device
SONOS Memory Cell
Transistor Fabrication
Split Gate Technology
High Voltage Transistor
Data Processing Device
Charge Trapping Layer
Thin Dielectric Layer
Flash Memory Device
Local SONOS Device
High Integration
39 patents (USPTO):Explore Patents
1. 8404542 - Semiconductor device having transistor with vertical gate electrode and method of fabricating the same (2013-03-26),
2. 8059473 - Non-volatile memory device (2011-11-15),
3. 7936003 - Semiconductor device having transistor with vertical gate electrode and method of fabricating the same (2011-05-03),
4. 7791951 - Methods of operating non-volatile memory device (2010-09-07),
5. 7768061 - Self aligned 1 bit local SONOS memory cell (2010-08-03),
6. 7598139 - Single chip data processing device with embedded nonvolatile memory and method thereof (2009-10-06),
7. 7589376 - Electrically erasable programmable read-only memory (EEPROM) device and methods of fabricating the same (2009-09-15),
8. 7588983 - EEPROM cell and EEPROM device with high integration and low source resistance and method of manufacturing the same (2009-09-15),
9. 7586146 - Non-volatile memory and method of fabricating same (2009-09-08),
10. 7514739 - Nonvolatile semiconductor device and method of fabricating the same (2009-04-07),
11. 7492002 - Non-volatile memory device with a select gate electrode and a control gate electrode formed on a floating gate (2009-02-17),
12. 7432159 - Electrically erasable programmable read-only memory (EEPROM) device and methods of fabricating the same (2008-10-07),
13. 7429766 - Split gate type nonvolatile memory device (2008-09-30),
14. 7422949 - High voltage transistor and method of manufacturing the same (2008-09-09),
15. 7411243 - Nonvolatile semiconductor device and method of fabricating the same (2008-08-12),

Title: The Innovative Journey of Seung-Beom Yoon

Introduction: Seung-Beom Yoon is a pioneering inventor hailing from Suwon-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Seung-Beom Yoon holds several patents in the areas of robotics, artificial intelligence, and renewable energy, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Seung-Beom Yoon has worked with leading tech companies, research institutions, and universities, consistently pushing the boundaries of what is possible in the realm of technology.

Collaborations: Throughout his career, Seung-Beom Yoon has collaborated with top engineers, scientists, and inventors from around the world, fostering a culture of innovation and knowledge-sharing.

Conclusion: Seung-Beom Yoon's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
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