The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2008
Filed:
Apr. 28, 2006
Hee-seog Jeon, Hwaseong-si, KR;
Seung-beom Yoon, Suwon-si, KR;
Jeong-uk Han, Suwon-si, KR;
Yong-tae Kim, Yongin-si, KR;
Hee-Seog Jeon, Hwaseong-si, KR;
Seung-Beom Yoon, Suwon-si, KR;
Jeong-Uk Han, Suwon-si, KR;
Yong-Tae Kim, Yongin-si, KR;
Abstract
In a split gate type nonvolatile memory device, a supplementary layer pattern is disposed on a source region of a semiconductor substrate. Since the source region is vertically extended by virtue of the presence of the supplementary layer pattern, it is therefore possible to increase an area of a region where a floating gate overlaps the source region and the supplementary layer pattern. Accordingly, the capacitance of a capacitor formed between the source and the floating gate increases so that it is possible for the nonvolatile memory device to perform program/erase operations at a low voltage level.