The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2009
Filed:
Dec. 30, 2005
Hee-seog Jeon, Hwaseong-si, KR;
Seung-beom Yoon, Suwon-si, KR;
Jeong-uk Han, Suwon-si, KR;
Yong-tae Kim, Yongin-si, KR;
Hee-Seog Jeon, Hwaseong-si, KR;
Seung-Beom Yoon, Suwon-si, KR;
Jeong-Uk Han, Suwon-si, KR;
Yong-Tae Kim, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
A non-volatile memory device includes a floating gate formed on a substrate with a gate insulation layer interposed therebetween, a tunnel insulation layer formed on the floating gate, a select gate electrode inducing charge introduction through the gate insulation layer, and a control gate electrode inducing charge tunneling occurring through the tunnel insulation layer. The select gate electrode is insulated from the control gate electrode. According to the non-volatile memory device, a select gate electrode and a control gate electrode are formed on a floating gate, and thus a voltage is applied to the respective gate electrodes to write and erase data.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile