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Dresden, Germany

Scott Luning

This inventor holds 20 USPTO granted patents. Top assignee: Advanced Micro Devices Corporation. Active years: 1999-2007.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Scott Luning. Retrieved from https://idiyas.com/inventor/scott-luning

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 20

% Patents Active = 90.0

Average Co-Inventor Count = 2.5

ph-index = 8

Forward Citations = 358(Granted Patents)

Location History:

San Francisco, CA (US) (1999 - 2003)
Dresden, DE (2004 - 2007)
Poughkeepie, NY (US) (2007)

Company Filing History:

20 out of 13,161

Advanced Micro Devices Corporation

Years Active: 1999-2007

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20 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 7279389 - Technique for forming a transistor having raised drain and source regions with a tri-layer hard mask for gate patterning (2007-10-09),

2. 7183169 - Method and arrangement for reducing source/drain resistance with epitaxial growth (2007-02-27),

3. 7176110 - Technique for forming transistors having raised drain and source regions with different heights (2007-02-13),

4. 7144786 - Technique for forming a transistor having raised drain and source regions with a reduced number of process steps (2006-12-05),

5. 6821853 - Differential implant oxide process (2004-11-23),

6. 6806126 - Method of manufacturing a semiconductor component (2004-10-19),

7. 6777281 - Maintaining LDD series resistance of MOS transistors by retarding dopant segregation (2004-08-17),

8. 6642134 - Semiconductor processing employing a semiconductor spacer (2003-11-04),

9. 6440819 - Method for differential trenching in conjunction with differential fieldox growth (2002-08-27),

10. 6410956 - Method and system for using a spacer to offset implant damage and reduce lateral diffusion in flash memory devices (2002-06-25),

11. 6387755 - Method and system for providing localized gate edge rounding with minimal encroachment and gate edge lifting (2002-05-14),

12. 6351013 - Low-K sub spacer pocket formation for gate capacitance reduction (2002-02-26),

13. 6232166 - CMOS processing employing zero degree halo implant for P-channel transistor (2001-05-15),

14. 6180468 - Very low thermal budget channel implant process for semiconductors (2001-01-30),

15. 6117719 - Oxide spacers as solid sources for gallium dopant introduction (2000-09-12),

Title: Scott Luning - Innovative Inventor from Dresden

Introduction: Scott Luning is a renowned inventor based in Dresden, Germany, known for his groundbreaking contributions to various technological fields.

Latest Patents: Scott Luning holds several patents in the areas of renewable energy, sustainable materials, and advanced robotics, showcasing his commitment to creating a more efficient and eco-friendly future.

Career Highlights: With a career spanning over two decades, Scott Luning has worked with leading research institutions and tech companies, developing cutting-edge solutions that have revolutionized industries worldwide.

Collaborations: Throughout his career, Scott Luning has collaborated with top engineers, scientists, and designers, fostering a culture of innovation and excellence in all his projects.

Conclusion: Scott Luning's passion for innovation and his relentless pursuit of technological advancement continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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