The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2001
Filed:
Oct. 23, 1998
Bin Yu, Santa Clara, CA (US);
Emi Ishida, Sunnyvale, CA (US);
Scott Luning, San Francisco, CA (US);
Timothy Thurgate, Sunnyvale, CA (US);
Advanced Micro Devices Inc., Sunnyvale, CA (US);
Abstract
An ultra-low thermal budget process is provided for channel implant by using a reverse process sequence where a conventional MOS transistor is formed without the channel implant. The originally deposited polysilicon gate is removed, a nitride film deposition and etch is used to form a nitride spacer with a predetermined configuration, and a self-aligned channel implant is performed. After the channel implantation, anneal and super-retrograded doping, the nitride spacer and the gate oxide are removed for subsequent regrowth of a second gate oxide and a polysilicon deposition to form a second polysilicon gate.