The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 27, 2007
Filed:
Mar. 07, 2005
Andrew M. Waite, Hopewell Junction, NY (US);
Scott Luning, Poughkeepie, NY (US);
Philip A. Fisher, Fishkill, NY (US);
Andrew M. Waite, Hopewell Junction, NY (US);
Scott Luning, Poughkeepie, NY (US);
Philip A. Fisher, Fishkill, NY (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
A method and arrangement for reducing the series resistance of the source and drain in a MOSFET device provides for epitaxially grown regions on top of the source and drain extensions to cover portions of the top surfaces of the silicide regions formed on the substrate. The epitaxial material provides an extra flow path for current to flow through to the silicide from the extension, as well as increasing the surface area between the source/drain and the silicide to reduce the contact resistance between the source/drain and the silicide.