The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 12, 2000
Filed:
Dec. 18, 1997
Applicant:
Inventors:
Scott Luning, San Francisco, CA (US);
Emi Ishida, Sunnyvale, CA (US);
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
438230 ; 438143 ; 438303 ; 438367 ; 438542 ; 438373 ; 438548 ; 438564 ;
Abstract
Impurities are formed in the active region of a semiconductor substrate by diffusion from a gate electrode sidewall spacer. A gate electrode is formed on a semiconductor substrate with a gate dielectric layer therebetween. Sidewall spacers are formed on the side surfaces of the gate electrode. Dopant atoms are subsequently introduce to transform the spacers into solid dopant sources. Dopant atoms are diffused from the spacers into the semiconductor substrate to form first doped regions.