The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 15, 2001
Filed:
Nov. 06, 1998
Dong-Hyuk Ju, Cupertino, CA (US);
Scott Luning, San Francisco, CA (US);
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
Halo implant regions are formed in a P-channel semiconductor device employing a zero degree tilt angle. N-type impurities are ion implanted to the desired depth in the semiconductor substrate prior to forming P-channel lightly doped source/drain areas. Subsequently, moderately or heavily doped source/drain regions are formed, followed by activation annealing. The halo implants diffuse to form halo structures at the desired location, thereby reducing short channel effects, such as subsurface punchthrough. Other embodiments enable independent control of the junction depths and channel lengths of N- and P-channel transistors, while maintaining high manufacturing throughput.