The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2004
Filed:
Sep. 06, 2002
Scott Luning, Dresden, DE;
Karsten Wieczorek, Am Schulfeld, DE;
Thorsten Kammler, Buchenstrasse, DE;
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Abstract
An insulated gate semiconductor device ( ) having reduced gate resistance and a method for manufacturing the semiconductor device ( ). A gate structure ( ) is formed on a major surface ( ) of a semiconductor substrate ( ). Successive nitride spacers ( ) are formed adjacent the sidewalls of the gate structure ( ). The nitride spacers ( ) are etched and recessed using a single etch to expose the upper portions ( A, A) of the gate structure ( ). Source ( ) and drain ( ) regions are formed in the semiconductor substrate ( ). Silicide regions ( ) are formed on the top surface ( ) and the exposed upper portions ( A, A) of the gate structure ( ) and the source region ( ) and the drain region (134). Electrodes ( ) are formed in contact with the silicide ( ) of the respective gate structure ( ), source region ( ), and the drain region ( ).