The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 26, 2002
Filed:
Jul. 13, 1999
Applicant:
Inventors:
Assignee:
Advanced Micro Devices, Inc., Sunnyvale, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/1062 ; H01L 3/1113 ; H01L 2/7088 ; H01L 2/13205 ;
U.S. Cl.
CPC ...
H01L 3/1062 ; H01L 3/1113 ; H01L 2/7088 ; H01L 2/13205 ;
Abstract
The capacitance between the gate electrode and the source/drain regions of a semiconductor device is reduced by forming sub-spacers of a low dielectric constant (K) material at the corners of the gate electrode above the source/drain regions. Subsequently, insulating sidewall spacers are formed over the sub-spacers to shield-shallow source/drain regions from subsequent impurity implantations. The resulting semiconductor device exhibits reduced capacitance between the gate electrode and the source/drain regions, while maintaining circuit reliability.