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For the Inventor, By the Inventor

Boise, ID, United States of America

Sanjay Rangan

USPTO Granted Patents = 21 

 

Average Co-Inventor Count = 3.6

ph-index = 4

Forward Citations = 46(Granted Patents)


Location History:

  • Fremont, CA (US) (2012)
  • Boise, ID (US) (2016 - 2020)
  • Albuquerque, NM (US) (2021 - 2023)

Company Filing History:

goldMedal19 out of 54,664 
 
Intel Corporation
 patents
silverMedal2 out of 37,905 
 
Micron Technology Incorporated
 patents

Years Active: 2012-2023

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21 patents (USPTO):Explore Patents
1. 11810617 - Techniques for a multi-step current profile for a phase change memory (2023-11-07),
2. 11705197 - Modified write voltage for memory devices (2023-07-18),
3. 11276462 - Techniques for a multi-step current profile for a phase change memory (2022-03-15),
4. 11170853 - Modified write voltage for memory devices (2021-11-09),
5. 11107523 - Multi-level cell (MLC) cross-point memory (2021-08-31),
6. 11100984 - Non volatile cross point memory having word line pass transistor with multiple active states (2021-08-24),
7. 10957387 - Multi-level cell (MLC) techniques and circuits for cross-point memory (2021-03-23),
8. 10884640 - Set technique for phase change memory (2021-01-05),
9. 10796761 - Tailoring current magnitude and duration during a programming pulse for a memory device (2020-10-06),
10. 10783966 - Multistage set procedure for phase change memory (2020-09-22),
11. 10446229 - Multistage set procedure for phase change memory (2019-10-15),
12. 10360977 - Tailoring current magnitude and duration during a programming pulse for a memory device (2019-07-23),
13. 10248351 - Set technique for phase change memory (2019-04-02),
14. 10185818 - Methods for generating random data using phase change materials and related devices and systems (2019-01-22),
15. 9892785 - Multistage set procedure for phase change memory (2018-02-13),

Sure, here is the article for you:

Title: The Inventor Spotlight: Sanjay Rangan

Introduction:

Sanjay Rangan, a notable inventor based in Boise, Idaho (US), has made significant contributions to the field of memory devices with a total of 21 patents to his name.

Latest Patents:

Sanjay's latest patents showcase his expertise in memory technology. One of his recent inventions includes "Techniques for a multi-step current profile for a phase change memory", focusing on implementing SET write operations to memory cells with phase change material. Another patent of his is "Modified write voltage for memory devices", where he introduces methods to decrease voltage threshold drift in memory cells' RESET state.

Career Highlights:

Sanjay Rangan has had a remarkable career, having worked at prestigious companies such as Intel Corporation and Micron Technology Incorporated. His innovative spirit and dedication to advancing technology have earned him recognition in the field.

Collaborations:

Throughout his career, Sanjay has collaborated with talented individuals in the industry. Some of his coworkers include Kiran Pangal and Lu Liu, who have worked closely with him on various projects.

Conclusion:

In conclusion, Sanjay Rangan's inventive contributions have significantly impacted the world of memory devices. His patents and collaborations reflect his commitment to pushing the boundaries of technology and finding innovative solutions to complex problems.

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