The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
Oct. 14, 2021
Micron Technology, Inc., Boise, ID (US);
Sandeepan Dasgupta, Albuquerque, NM (US);
Sanjay Rangan, Albuquerque, NM (US);
Koushik Banerjee, Milpitas, CA (US);
Nevil Gajera, Meridian, ID (US);
Mase J. Taub, Folsom, CA (US);
Kiran Pangal, Fremont, CA (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
Methods, systems, and devices for a modified write voltage for memory devices are described. In an example, the memory device may determine a first set of memory cells to be switched from a first logic state (e.g., a SET state) to a second logic state (e.g., a RESET state) based on a received write command. The memory device may perform a read operation to determine a subset of the first set of memory cells (e.g., a second set of memory cells) having a conductance threshold satisfying a criteria based on a predicted drift of the memory cells. The memory device may apply a RESET pulse to each of the memory cells within the first set of memory cells, where the RESET pulse applied to the second set of memory cells is modified to decrease voltage threshold drift in the RESET state.