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For the Inventor, By the Inventor

Beaverton, OR, United States of America

Sang-Yun Lee

This inventor holds 33 USPTO granted patents and 10 published patent applications and 1 EPO patent, primarily in Semiconductor Memory. Top assignees: Besang Inc., Integrated Device Technology, Inc., Other. Active years: 2001-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sang-Yun Lee. Retrieved from https://idiyas.com/inventor/sang-yun-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 33 

% Patents Active = 60.6


Average Co-Inventor Count = 1.1

ph-index = 15

Forward Citations = 4,174(Granted Patents)


Location History:

  • Beaverton, OR (US) (2002 - 2015)
  • Hillsboro, OR (US) (2001 - 2024)

Company Filing History:

goldMedal11 out of 11 
 
Besang Inc.
 patents
silverMedal3 out of 1,264 
 
Integrated Device Technology, Inc.
 patents
bronzeMedal19 out of 834,513 
Other
 patents

Years Active: 2001-2025

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Areas of Expertise:
Gate Contact Formation
Three-Dimensional Integrated Circuit
Nonvolatile Memory
Semiconductor Device
Bitline Structure
Wafer Bonding
Cobalt Silicide
Embedded Memory
Vertical Transistors
Bonded Semiconductor Structure
Etch Margin
Ternary Content Addressable Memory
33 patents (USPTO):Explore Patents
1. 12218211 - Structures of gate contact formation for vertical transistors (2025-02-04),
2. 12191363 - Methods of gate contact formation for vertical transistors (2025-01-07),
3. 12010853 - Methods for novel three-dimensional nonvolatile memory (2024-06-11),
4. 11978777 - Methods of gate contact formation for vertical transistors (2024-05-07),
5. 11925026 - Structures for novel three-dimensional nonvolatile memory (2024-03-05),
6. 11769809 - Structures of gate contact formation for vertical transistors (2023-09-26),
7. 11600309 - 3D memory with 3D sense amplifier (2023-03-07),
8. 11424248 - Bitline structure for three-dimensional integrated circuit and method of forming the same (2022-08-23),
9. 9012292 - Semiconductor memory device and method of fabricating the same (2015-04-21),
10. 8779597 - Semiconductor device with base support structure (2014-07-15),
11. 8723335 - Semiconductor circuit structure and method of forming the same using a capping layer (2014-05-13),
12. 8471263 - Information storage system which includes a bonded semiconductor structure (2013-06-25),
13. 8455978 - Semiconductor circuit structure and method of making the same (2013-06-04),
14. 8367524 - Three-dimensional integrated circuit structure (2013-02-05),
15. 8071438 - Semiconductor circuit (2011-12-06),

Title: Inventor Sang-Yun Lee: Pioneering Innovations in Beaverton

Introduction: Sang-Yun Lee is a distinguished inventor based in Beaverton, Oregon, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Sang-Yun Lee holds several patents in the areas of artificial intelligence, machine learning, and robotics, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Sang-Yun Lee has worked with leading tech companies, spearheading projects that have revolutionized the industry. His expertise in developing cutting-edge solutions has earned him recognition as a visionary in the field.

Collaborations: Throughout his career, Sang-Yun Lee has collaborated with top researchers, engineers, and scientists to bring his innovative ideas to life. His ability to work seamlessly in multidisciplinary teams has led to the successful implementation of numerous projects.

Conclusion: Inventor Sang-Yun Lee's relentless pursuit of innovation and his passion for creating transformative technologies continue to inspire the next generation of inventors and shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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