The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 21, 2015
Filed:
Jul. 01, 2011
Applicant:
Sang-yun Lee, Beaverton, OR (US);
Inventor:
Sang-Yun Lee, Beaverton, OR (US);
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 49/02 (2006.01); H01L 27/105 (2006.01); H01L 27/108 (2006.01); H01L 27/115 (2006.01); H01L 21/84 (2006.01); H01L 27/06 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 28/91 (2013.01); H01L 21/84 (2013.01); H01L 27/0688 (2013.01); H01L 27/105 (2013.01); H01L 27/10808 (2013.01); H01L 27/1082 (2013.01); H01L 27/10852 (2013.01); H01L 27/10894 (2013.01); H01L 27/10897 (2013.01); H01L 27/11514 (2013.01); H01L 27/1207 (2013.01);
Abstract
A method for fabricating semiconductor memory device, includes providing a semiconductor substrate; forming a lower region which includes a first data storage device, which is carried by the semiconductor substrate; forming a switching device which is carried by the first data storage device; and forming an upper region which includes a second data storage device, which is carried by the switching device. The step of forming the first storage device includes forming a first electrode having a cylindrical or pillar shape, the first electrode being connected to the switching device.