logo

For the Inventor, By the Inventor

Hwaseong-si, South Korea

Sang-beom Kang

USPTO Granted Patents = 48 

Average Co-Inventor Count = 4.2

ph-index = 14

Forward Citations = 602(Granted Patents)


Company Filing History:

goldMedal48 out of 131,744 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2007-2019

Loading Chart...
Areas of Expertise:
Spin Transfer Torque Memory
Semiconductor Memory Devices
Nonvolatile Memory Devices
Resistive Memory Devices
Phase Change Memory Devices
Error Correction Methods
Data Read Circuits
Memory Cell Array Biasing
Three-Dimensional Memory Stacks
Magnetic Packet Memory
Adaptive Write Bias Circuits
Multi-Level Memory Programming
48 patents (USPTO):Explore Patents
1. 10446207 - Spin transfer torque magnetic random access memory for supporting operational modes with mode register (2019-10-15),
2. 10204670 - Spin transfer torque magnetic random access memory for supporting operational modes with mode register (2019-02-12),
3. 9183910 - Semiconductor memory devices for alternately selecting bit lines (2015-11-10),
4. 9147500 - Semiconductor memory device having resistive memory cells and method of testing the same (2015-09-29),
5. 9042152 - Data read circuit, a non-volatile memory device having the same, and a method of reading data from the non-volatile memory device (2015-05-26),
6. 8780656 - Stacked memory device and method of repairing same (2014-07-15),
7. 8780617 - Semiconductor memory device and method of performing burn-in test on the same (2014-07-15),
8. 8677216 - Stacked semiconductor memory device and related error-correction method (2014-03-18),
9. 8654595 - Nonvolatile memory device with a clamping voltage generation circuit for compensating the variations in memory cell parameters (2014-02-18),
10. 8611121 - Stacked memory devices (2013-12-17),
11. 8406029 - Identification of data positions in magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices (2013-03-26),
12. 8248842 - Memory cell array biasing method and a semiconductor memory device (2012-08-21),
13. 8223529 - Resistive memory devices, memory systems and methods of controlling input and output operations of the same (2012-07-17),
14. 8136017 - Multi-layer semiconductor memory device comprising error checking and correction (ECC) engine and related ECC method (2012-03-13),
15. 8111563 - Multi-level nonvolatile memory device with fast execution of program speed and programming method of the same (2012-02-07),

Title: Sang-beom Kang: Innovating in Magnetic Random Access Memory

Introduction

Sang-beom Kang, based in Hwaseong-si, South Korea, is a notable inventor with a significant contribution to the field of magnetic random access memory (MRAM). With 48 patents to his name, Kang has consistently pushed the boundaries of technology, particularly in memory systems.

Latest Patents

Kang's latest inventions include an advanced magnetic random access memory designed to support a variety of operational modes through a mode register. This innovative MRAM architecture includes magnetic memory cells that are engineered to switch between at least two states based on their magnetization direction. This capability allows for enhanced performance in memory modules and systems, making them more versatile and efficient for various applications.

Career Highlights

Throughout his career at Samsung Electronics Co., Ltd., Sang-beom Kang has been instrumental in developing cutting-edge memory technologies. His work not only contributes to the company's success but also positions Samsung as a leader in the semiconductor industry. Kang's commitment to innovation has been recognized through numerous patents that highlight his technical expertise and visionary outlook.

Collaborations

Kang often collaborates with talented peers, including Hyung-Rok Oh and Woo-Yeong Cho. Together, they work synergistically to advance the technology underlying MRAM, pushing innovation forward and ensuring that their developments meet the high standards of modern computing needs.

Conclusion

Sang-beom Kang's contributions to the realm of magnetic random access memory underscore his status as a leading inventor. With a strong patent portfolio and collaborative spirit, he continues to make significant strides in technology at Samsung Electronics Co., Ltd., ultimately paving the way for the future of memory systems.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…