Sang-beom Kang

This inventor holds 48 USPTO granted patents and 2 published patent applications, primarily in Semiconductor Memory. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2007-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Sang-beom Kang. Retrieved from https://idiyas.com/inventor/sang-beom-kang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 48 (Patent Applications = 2)

% Patents Active = 75.0

Average Co-Inventor Count = 4.2

ph-index = 14

Forward Citations = 603(Granted Patents)

Company Filing History:

48 out of 132,108

Samsung Electronics Co., Ltd.

patents

Years Active: 2007-2019

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Areas of Expertise:

Spin Transfer Torque

Nonvolatile Memory

Error Correction

Resistive Memory

Phase Change Memory

Stacked Memory Devices

Memory Cell Array

Adaptive Write Bias

Three-Dimensional Stack

Data Read Circuit

Memory Testing

Bit Line Selection

48 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10446207 - Spin transfer torque magnetic random access memory for supporting operational modes with mode register (2019-10-15),

2. 10204670 - Spin transfer torque magnetic random access memory for supporting operational modes with mode register (2019-02-12),

3. 9183910 - Semiconductor memory devices for alternately selecting bit lines (2015-11-10),

4. 9147500 - Semiconductor memory device having resistive memory cells and method of testing the same (2015-09-29),

5. 9042152 - Data read circuit, a non-volatile memory device having the same, and a method of reading data from the non-volatile memory device (2015-05-26),

6. 8780656 - Stacked memory device and method of repairing same (2014-07-15),

7. 8780617 - Semiconductor memory device and method of performing burn-in test on the same (2014-07-15),

8. 8677216 - Stacked semiconductor memory device and related error-correction method (2014-03-18),

9. 8654595 - Nonvolatile memory device with a clamping voltage generation circuit for compensating the variations in memory cell parameters (2014-02-18),

10. 8611121 - Stacked memory devices (2013-12-17),

11. 8406029 - Identification of data positions in magnetic packet memory storage devices, memory systems including such devices, and methods of controlling such devices (2013-03-26),

12. 8248842 - Memory cell array biasing method and a semiconductor memory device (2012-08-21),

13. 8223529 - Resistive memory devices, memory systems and methods of controlling input and output operations of the same (2012-07-17),

14. 8136017 - Multi-layer semiconductor memory device comprising error checking and correction (ECC) engine and related ECC method (2012-03-13),

15. 8111563 - Multi-level nonvolatile memory device with fast execution of program speed and programming method of the same (2012-02-07),

Title: Sang-beom Kang: Innovating in Magnetic Random Access Memory

Introduction

Sang-beom Kang, based in Hwaseong-si, South Korea, is a notable inventor with a significant contribution to the field of magnetic random access memory (MRAM). With 48 patents to his name, Kang has consistently pushed the boundaries of technology, particularly in memory systems.

Latest Patents

Kang's latest inventions include an advanced magnetic random access memory designed to support a variety of operational modes through a mode register. This innovative MRAM architecture includes magnetic memory cells that are engineered to switch between at least two states based on their magnetization direction. This capability allows for enhanced performance in memory modules and systems, making them more versatile and efficient for various applications.

Career Highlights

Throughout his career at Samsung Electronics Co., Ltd., Sang-beom Kang has been instrumental in developing cutting-edge memory technologies. His work not only contributes to the company's success but also positions Samsung as a leader in the semiconductor industry. Kang's commitment to innovation has been recognized through numerous patents that highlight his technical expertise and visionary outlook.

Collaborations

Kang often collaborates with talented peers, including Hyung-Rok Oh and Woo-Yeong Cho. Together, they work synergistically to advance the technology underlying MRAM, pushing innovation forward and ensuring that their developments meet the high standards of modern computing needs.

Conclusion

Sang-beom Kang's contributions to the realm of magnetic random access memory underscore his status as a leading inventor. With a strong patent portfolio and collaborative spirit, he continues to make significant strides in technology at Samsung Electronics Co., Ltd., ultimately paving the way for the future of memory systems.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

2 patents pending: