The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2012
Filed:
Feb. 25, 2008
Hyung-rok OH, Yongin-si, KR;
Sang-beom Kang, Hwaseong-si, KR;
Woo-yeong Cho, Suwon-si, KR;
Joon-min Park, Dongjak-gu, KR;
Hyung-rok Oh, Yongin-si, KR;
Sang-beom Kang, Hwaseong-si, KR;
Woo-yeong Cho, Suwon-si, KR;
Joon-min Park, Dongjak-gu, KR;
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Abstract
Embodiments of the invention provide a multi-layer semiconductor memory device and a related error checking and correction (ECC) method. The multi-layer semiconductor memory device includes first and second memory cell array layers, wherein the first memory cell array layer stores first payload data. The multi-layer semiconductor memory device also includes an ECC engine selectively connected to the second memory cell array layer and configured to receive the first payload data, generate first parity data corresponding to the first payload data, and store the first parity data exclusively in the second memory cell array layer.