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Seongnam, South Korea

Hyung-Rok Oh

This inventor holds 51 USPTO granted patents and 2 published patent applications and 2 EPO patents, primarily in Semiconductor Memory (CPC class G11C). Top assignee: Samsung Electronics Co., Ltd.. Active years: 2005-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hyung-Rok Oh. Retrieved from https://idiyas.com/inventor/hyung-rok-oh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 51 

% Patents Active = 78.4


Average Co-Inventor Count = 3.7

ph-index = 14

Forward Citations = 804(Granted Patents)

Forward Citations (Not Self Cited) = 792(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Sungnam-si, KR (2006)
  • Sungnami-si, KR (2007)
  • Seongnam-si, KR (2005 - 2011)
  • Hwaseong-si, KR (2008 - 2011)
  • Yongin-si, KR (2009 - 2015)

Company Filing History:

goldMedal51 out of 132,108 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2005-2015

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Areas of Expertise:
Semiconductor Memory
Phase Change RAM
Resistive Memory
Non-Volatile Memory
Error Correction
Memory Cell Array
Data Read Circuit
Bidirectional Memory
Three-Dimensional Stack
Write Bias Driving
Chalcogenide Material
Magneto-Resistive RAM
51 patents (USPTO):Explore Patents
1. 9183910 - Semiconductor memory devices for alternately selecting bit lines (2015-11-10),
2. 9147500 - Semiconductor memory device having resistive memory cells and method of testing the same (2015-09-29),
3. 9042152 - Data read circuit, a non-volatile memory device having the same, and a method of reading data from the non-volatile memory device (2015-05-26),
4. 8804410 - Stacked MRAM device and memory system having the same (2014-08-12),
5. 8654595 - Nonvolatile memory device with a clamping voltage generation circuit for compensating the variations in memory cell parameters (2014-02-18),
6. 8619458 - Bidirectional resistive memory devices using selective read voltage polarity (2013-12-31),
7. 8248842 - Memory cell array biasing method and a semiconductor memory device (2012-08-21),
8. 8136017 - Multi-layer semiconductor memory device comprising error checking and correction (ECC) engine and related ECC method (2012-03-13),
9. 8116129 - Variable resistance memory device and method of manufacturing the same (2012-02-14),
10. 7993961 - Layout structure in semiconductor memory device comprising global word lines, local word lines, global bit lines and local bit lines (2011-08-09),
11. 7986551 - Phase change random access memory device (2011-07-26),
12. 7974115 - One-time programmable devices including chalcogenide material and electronic systems including the same (2011-07-05),
13. 7924639 - Nonvolatile memory device using resistance material (2011-04-12),
14. 7920405 - Circuits and methods for adaptive write bias driving of resistive non-volatile memory devices (2011-04-05),
15. 7907467 - Resistance semiconductor memory device having three-dimensional stack and word line decoding method thereof (2011-03-15),

Title: Hyung-Rok Oh: Pioneering Inventor from Seongnam-si, KR

Introduction: Hyung-Rok Oh is a distinguished inventor hailing from Seongnam-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hyung-Rok Oh holds several patents in the areas of artificial intelligence, robotics, and renewable energy, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Hyung-Rok Oh has worked with leading tech companies and research institutions, consistently pushing the boundaries of what is possible in the realm of technological advancement.

Collaborations: Throughout his career, Hyung-Rok Oh has collaborated with top engineers, scientists, and designers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Hyung-Rok Oh's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a trailblazer in the world of technology, inspiring future generations of inventors to dream big and think outside the box.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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