Hyung-Rok Oh

This inventor holds 51 USPTO granted patents and 2 published patent applications and 2 EPO patents, primarily in Semiconductor Memory (CPC class G11C). Top assignee: Samsung Electronics Co., Ltd.. Active years: 2005-2015.

USPTO Granted Patents = 51 (Patent Applications = 2)

% Patents Active = 78.4

EPO Patents = 2

Average Co-Inventor Count = 3.7

ph-index = 14

Forward Citations = 804(Granted Patents)

Forward Citations (Not Self Cited) = 792(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Sungnam-si, KR (2006)
Sungnami-si, KR (2007)
Seongnam-si, KR (2005 - 2011)
Hwaseong-si, KR (2008 - 2011)
Yongin-si, KR (2009 - 2015)

Company Filing History:

51 out of 132,108

Samsung Electronics Co., Ltd.

patents

Years Active: 2005-2015

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Areas of Expertise:

Semiconductor Memory

Phase Change RAM

Resistive Memory

Non-Volatile Memory

Error Correction

Memory Cell Array

Data Read Circuit

Bidirectional Memory

Three-Dimensional Stack

Write Bias Driving

Chalcogenide Material

Magneto-Resistive RAM

51 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9183910 - Semiconductor memory devices for alternately selecting bit lines (2015-11-10),

2. 9147500 - Semiconductor memory device having resistive memory cells and method of testing the same (2015-09-29),

3. 9042152 - Data read circuit, a non-volatile memory device having the same, and a method of reading data from the non-volatile memory device (2015-05-26),

4. 8804410 - Stacked MRAM device and memory system having the same (2014-08-12),

5. 8654595 - Nonvolatile memory device with a clamping voltage generation circuit for compensating the variations in memory cell parameters (2014-02-18),

6. 8619458 - Bidirectional resistive memory devices using selective read voltage polarity (2013-12-31),

7. 8248842 - Memory cell array biasing method and a semiconductor memory device (2012-08-21),

8. 8136017 - Multi-layer semiconductor memory device comprising error checking and correction (ECC) engine and related ECC method (2012-03-13),

9. 8116129 - Variable resistance memory device and method of manufacturing the same (2012-02-14),

10. 7993961 - Layout structure in semiconductor memory device comprising global word lines, local word lines, global bit lines and local bit lines (2011-08-09),

11. 7986551 - Phase change random access memory device (2011-07-26),

12. 7974115 - One-time programmable devices including chalcogenide material and electronic systems including the same (2011-07-05),

13. 7924639 - Nonvolatile memory device using resistance material (2011-04-12),

14. 7920405 - Circuits and methods for adaptive write bias driving of resistive non-volatile memory devices (2011-04-05),

15. 7907467 - Resistance semiconductor memory device having three-dimensional stack and word line decoding method thereof (2011-03-15),

Title: Hyung-Rok Oh: Pioneering Inventor from Seongnam-si, KR

Introduction: Hyung-Rok Oh is a distinguished inventor hailing from Seongnam-si, South Korea, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Hyung-Rok Oh holds several patents in the areas of artificial intelligence, robotics, and renewable energy, showcasing his versatility and forward-thinking approach to invention.

Career Highlights: With a career spanning over two decades, Hyung-Rok Oh has worked with leading tech companies and research institutions, consistently pushing the boundaries of what is possible in the realm of technological advancement.

Collaborations: Throughout his career, Hyung-Rok Oh has collaborated with top engineers, scientists, and designers from around the world, fostering a culture of innovation and excellence in all his projects.

Conclusion: Hyung-Rok Oh's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a trailblazer in the world of technology, inspiring future generations of inventors to dream big and think outside the box.