The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 18, 2014

Filed:

Sep. 06, 2012
Applicants:

Chan-kyung Kim, Hwaseong-Si, KR;

Hong-sun Hwang, Suwon-Si, KR;

Chul-woo Park, Yongin-Si, KR;

Sang-beom Kang, Hwaseong-Si, KR;

Hyung-rok OH, Yongin-Si, KR;

Inventors:

Chan-Kyung Kim, Hwaseong-Si, KR;

Hong-Sun Hwang, Suwon-Si, KR;

Chul-Woo Park, Yongin-Si, KR;

Sang-Beom Kang, Hwaseong-Si, KR;

Hyung-Rok Oh, Yongin-Si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile memory device comprises a nonvolatile cell array comprising a memory cell and a reference cell, a clamping circuit electrically connected to the memory cell and configured to clamp a voltage applied to a data sensing line during a read operation, and a clamping voltage generation unit configured to generate a clamping voltage responsive to a first voltage having a level based on the reference cell, and to feed back the clamping voltage to the clamping circuit.


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