The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 2015
Filed:
Jul. 31, 2012
Chan-kyung Kim, Hwaseong-si, KR;
Hong-sun Hwang, Suwon-si, KR;
Chul-woo Park, Yongin-si, KR;
Sang-beom Kang, Hwaseong-si, KR;
Hyung-rok OH, Yongin-si, KR;
Chan-kyung Kim, Hwaseong-si, KR;
Hong-sun Hwang, Suwon-si, KR;
Chul-woo Park, Yongin-si, KR;
Sang-beom Kang, Hwaseong-si, KR;
Hyung-rok Oh, Yongin-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Abstract
A non-volatile memory device including a cell array, which includes a plurality of memory cells, and a sense amplification circuit. The sense amplification circuit is configured to receive a data voltage of a memory cell, a first reference voltage and a second reference voltage during a data read operation of the memory cell, generate differential output signals based on a voltage level difference between the data voltage and the first and second reference voltages, and output the differential output signals as data read from the memory cell.