The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Aug. 16, 2012
Hyung-rok OH, Yongin-si, KR;
Se-chung OH, Suwon-si, KR;
Hyung-Rok Oh, Yongin-si, KR;
Se-Chung Oh, Suwon-si, KR;
Samsung Electronics Co., Ltd., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Abstract
Provided is a stacked magnetic random access memory (MRAM) in which memory cell arrays having various characteristics or functions are included in memory cell layers. The stacked MRAM device includes a semiconductor substrate and at least one memory cell layers. The semiconductor substrate includes a first memory cell array. Each of the memory cell layers includes a memory cell array having a different function from the first memory cell array and is stacked on the first memory cell array. As a result, the stacked MRAM device has high density, high performance, and high reliability.