The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 15, 2019
Filed:
Jan. 22, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si OT, KR;
Inventors:
Chan-kyung Kim, Hwaseong-si, KR;
Dong-seok Kang, Seoul, KR;
Hye-jin Kim, Seoul, KR;
Chul-woo Park, Yongin-si, KR;
Dong-hyun Sohn, Hwaseong-si, KR;
Yun-sang Lee, Yongin-si, KR;
Sang-beom Kang, Hwaseong-si, KR;
Hyung-rock Oh, Yongin-si, KR;
Soo-ho Cha, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); G06F 12/02 (2006.01);
U.S. Cl.
CPC ...
G11C 11/165 (2013.01); G06F 12/0246 (2013.01); G11C 11/161 (2013.01); G11C 11/1653 (2013.01); G11C 11/1659 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/1693 (2013.01);
Abstract
A magnetic random access memory (MRAM), and a memory module, memory system including the same, and method for controlling the same are disclosed. The MRAM includes magnetic memory cells configured to change between at least two states according to a magnetization direction, and a mode register supporting a plurality of operational modes.