This inventor holds 2 USPTO granted patents. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2019.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2019
Title: Hyung-rock Oh: Innovator in Magnetic Random Access Memory Technology
Introduction
Hyung-rock Oh is a prominent inventor based in Yongin-si, South Korea. He has made significant contributions to the field of memory technology, particularly in magnetic random access memory (MRAM). With a total of 2 patents, his work has garnered attention for its innovative approach to memory systems.
Latest Patents
Hyung-rock Oh's latest patents include advancements in spin transfer torque magnetic random access memory. This technology supports operational modes with a mode register. The MRAM he developed features magnetic memory cells that can change between at least two states based on magnetization direction. Additionally, the patent outlines a memory module and a memory system that includes methods for controlling these components.
Career Highlights
Hyung-rock Oh is currently employed at Samsung Electronics Co., Ltd., where he continues to push the boundaries of memory technology. His work at Samsung has positioned him as a key player in the development of advanced memory solutions.
Collaborations
Throughout his career, Hyung-rock Oh has collaborated with notable colleagues, including Chan-Kyung Kim and Dong-seok Kang. These partnerships have contributed to the success of his projects and the advancement of technology in the field.
Conclusion
Hyung-rock Oh's contributions to magnetic random access memory technology highlight his innovative spirit and dedication to advancing memory systems. His patents reflect a commitment to enhancing operational efficiency in memory technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile