Yongin-si, South Korea

Yun-sang Lee

USPTO Granted Patents = 25 

Average Co-Inventor Count = 2.7

ph-index = 8

Forward Citations = 202(Granted Patents)


Location History:

  • Kyungki-do, KR (2000 - 2006)
  • Gyeonggi-do, KR (2006 - 2007)
  • Daejeon, KR (2010)
  • Yongin-si, KR (2009 - 2019)

Company Filing History:


Years Active: 2000-2019

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25 patents (USPTO):

Title: The Innovative Mind of Yun-sang Lee

Introduction

Yun-sang Lee, a prominent inventor based in Yongin-si, South Korea, has made significant contributions to the field of magnetic random access memory (MRAM). With a remarkable portfolio of 25 patents, Lee’s innovations have played a crucial role in advancing memory technology, benefiting both consumers and industries alike.

Latest Patents

Among his latest breakthroughs is the invention titled "Spin transfer torque magnetic random access memory for supporting operational modes with mode register." This technology involves a memory system that includes magnetic memory cells capable of changing between multiple states based on magnetization direction. It also features a mode register that supports various operational modes, enhancing the flexibility and efficiency of memory applications.

Career Highlights

Throughout his career, Yun-sang Lee has been associated with esteemed companies, notably Samsung Electronics Co., Ltd., where his work has influenced the direction of MRAM technology. His expertise in the field has positioned him as a leading figure in memory systems and components.

Collaborations

Lee has collaborated with numerous talented individuals, including esteemed colleagues Chul-woo Park and Dong-seok Kang. These partnerships have fostered an environment of innovation and creativity, resulting in advancements that continue to impact technology.

Conclusion

Yun-sang Lee's impressive track record of inventions and patents underscores his significance as an inventor in the technology sector. His relentless pursuit of innovation in MRAM will undoubtedly pave the way for future breakthroughs, solidifying his legacy in the world of memory technology.

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