The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 27, 2015
Filed:
Dec. 04, 2012
Chan-kyung Kim, Hwaseong-si, KR;
Yun-sang Lee, Yongin-si, KR;
Chul-woo Park, Yongin-si, KR;
Hong-sun Hwang, Suwon-si, KR;
Chan-Kyung Kim, Hwaseong-si, KR;
Yun-Sang Lee, Yongin-si, KR;
Chul-Woo Park, Yongin-si, KR;
Hong-Sun Hwang, Suwon-si, KR;
Abstract
Provided is a memory device having a first switch configured to receive a first CSL signal to input or output data. A second switch is configured to receive a second CSL signal. A sensing and latch circuit (SLC) is coupled between the first and second switches. And at least one memory cell is coupled to the second switch. The second switch is configured to control timing of read or write operations of the at least one memory cell in response to the second CSL signal, e.g., where a read operation can be performed in not more than about 5 ns. The SLC operates as a latch in a write mode and as an amplifier in a read mode. The memory device may comprise part of a memory system or other apparatus including such memory device or system. Methods of performing read and write operations using such memory device are also provided.