The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8111563 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 07, 2012

Filed:

Mar. 10, 2010
Applicants:

Ho-jung Kim, Suwon-si, KR;

Sang-beom Kang, Hwaseong-si, KR;

Chul Woo Park, Yongin-si, KR;

Hyun Ho Choi, Suwon-si, KR;

Inventors:

Ho-Jung Kim, Suwon-si, KR;

Sang-Beom Kang, Hwaseong-si, KR;

Chul Woo Park, Yongin-si, KR;

Hyun Ho Choi, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile memory device having a plurality of multi-level memory cells, the plurality being at least two, may be programmed by writing a least significant bit for each multi-level memory cell of the plurality of memory cells and, after the least significant bit has been written for each multi-level memory cell of the plurality of memory cells, writing a next significant bit for each multi-level memory cell.


Find Patent Forward Citations

Kim, Ho-Jung. (2012). Multi-level nonvolatile memory device with fast execution of program speed and programming method of the same (U.S. Patent No. 8111563). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8111563

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