Beacon, NY, United States of America

Samuel S Choi

This inventor holds 44 USPTO granted patents and 4 published patent applications, primarily in Interconnect Structures. Top assignees: International Business Machines Corporation, Globalfoundries Inc., Globalfoundries U.S. 2 LLC. Active years: 2006-2019.

USPTO Granted Patents = 44 

% Patents Active = 43.2

Average Co-Inventor Count = 5.0

ph-index = 8

Forward Citations = 224(Granted Patents)


Location History:

  • Beacon, NY (US) (2006 - 2018)
  • Hopewell Junction, NY (US) (2012 - 2019)
  • Fishkill, NY (US) (2015 - 2019)

Company Filing History:


Years Active: 2006-2019

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Areas of Expertise:
Interconnects
E-Fuses
Electromigration
Graphene
Metal Structures
Dielectric Layer
Programming Capability
Microelectronic Structures
Subtractive Etch
Damascene Feature
Via-Fuse
Hybrid Metallization
44 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Samuel S. Choi

Introduction

Samuel S. Choi is a distinguished inventor based in Beacon, NY, recognized for his remarkable contributions to the semiconductor industry. With an impressive portfolio of 44 patents, he has significantly advanced methods and technologies in the realm of electronic device fabrication. His innovative approaches continue to impact the efficiency and functionality of semiconductor devices.

Latest Patents

Among his recent patents, two notable inventions stand out. The first is titled "Interconnect Structure Having Subtractive Etch Feature and Damascene Feature." This patent describes methods of forming an interconnect structure, which includes depositing a first conductive material on a substrate and employing processes such as subtractive etching to create a patterned first conductive layer. The invention also involves depositing a dielectric layer and a second conductive material, along with techniques for removing the second conductive material through the top of a second metal liner.

The second recent patent focuses on "Forming Air Gap," which outlines a method for creating an air gap in semiconductor devices. This method includes forming an air gap mask layer over a dielectric interconnect layer and patterning it using extreme ultraviolet (EUV) light. The patent details the steps for etching an air gap space adjacent to the conductive interconnect within the dielectric layer, ultimately leading to the formation of an air gap in the dielectric interconnect layer.

Career Highlights

Samuel S. Choi has honed his expertise at renowned companies, including International Business Machines Corporation (IBM) and GlobalFoundries Inc. His tenure at these organizations has been marked by groundbreaking research and innovative developments in semiconductor technology.

Collaborations

Throughout his career, Samuel has collaborated with industry professionals, including Griselda Bonilla and Naftali Eliahu Lustig. These collaborations have fostered an exchange of ideas and techniques, contributing to the advancement of his inventions and the field of semiconductor research.

Conclusion

Samuel S. Choi's extensive work as an inventor has not only led to numerous patents but has also positioned him as a key figure in the semiconductor industry. His latest innovations highlight his commitment to improving semiconductor device technologies. As the field continues to evolve, Choi’s contributions are expected to remain influential, paving the way for future developments in electronics.

Profile summary based on public USPTO records.
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