The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2017

Filed:

Dec. 18, 2014
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Junjing Bao, San Diego, CA (US);

Griselda Bonilla, Fishkill, NY (US);

Samuel S. Choi, Hopewell Junction, NY (US);

Ronald G. Filippi, Wappingers Falls, NY (US);

Xiao H. Liu, Briarcliff Manor, NY (US);

Naftali E. Lustig, Croton on Hudson, NY (US);

Andrew H. Simon, Fishkill, NY (US);

Assignee:

GlobalFoundries, Inc., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/48 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/7682 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 2924/0002 (2013.01);
Abstract

An method including forming multiple interconnect levels on top of one another, each level comprising a metal interconnect and a crack stop both embedded in a dielectric layer, and a dielectric capping layer directly on top of the dielectric layer and directly on top of the metal interconnect, the crack stop is an air gap which intersects an interface between the dielectric layer and the dielectric capping layer of each interconnect level, and forming a through substrate via through the multiple interconnect levels adjacent to, but not in direct contact with, the crack stop, the crack stop of each interconnect level is directly between the metal interconnect of each interconnect level and the through substrate via to prevent cracks caused during fabrication from propagating away from the through substrate via and damaging the metal interconnect.


Find Patent Forward Citations

Loading…