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For the Inventor, By the Inventor

Chiba, Japan

Ryoji Hagiwara

This inventor holds 11 USPTO granted patents. Top assignees: Sii Nanotechnology Inc., Seiko Instruments Inc. Active years: 1992-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ryoji Hagiwara. Retrieved from https://idiyas.com/inventor/ryoji-hagiwara

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 11

% Patents Active = 72.7

Average Co-Inventor Count = 2.1

ph-index = 4

Forward Citations = 42(Granted Patents)


Location History:

  • Tokyo, JP (1992)
  • Chiba, JP (2001 - 2011)

Company Filing History:

goldMedal8 out of 223 
 
Sii Nanotechnology Inc.
 patents
silverMedal3 out of 2,903 
 
Seiko Instruments Inc
 patents

Years Active: 1992-2011

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11 patents (USPTO):Explore Patents
1. 7927769 - Method for fabricating EUVL mask (2011-04-19),
2. 7576340 - Focused ion beam processing method (2009-08-18),
3. 7488961 - Charged particle beam irradiation method and charged particle beam apparatus (2009-02-10),
4. 7485880 - Charged particle beam scan and irradiation method, charged particle beam apparatus, workpiece observation method and workpiece processing method (2009-02-03),
5. 7375352 - Photomask defect correction method employing a combined device of a focused electron beam device and an atomic force microscope (2008-05-20),
6. 7018683 - Electron beam processing method (2006-03-28),
7. 6891171 - Method for repairing a phase shift mask and a focused ion beam apparatus for carrying out method (2005-05-10),
8. 6780551 - Charged particle processing for forming pattern boundaries at a uniform thickness (2004-08-24),
9. 6303930 - Coordinating optical type observing apparatus and laser marking method (2001-10-16),
10. 5109159 - X-ray image sensor (1992-04-28),
11. 5079423 - X-ray image sensor (1992-01-07),

Title: Ryoji Hagiwara: Innovator in Extreme Ultraviolet Lithography

Introduction

Ryoji Hagiwara is a prominent inventor based in Chiba, Japan. He has made significant contributions to the field of extreme ultraviolet lithography (EUVL) and has been awarded 11 patents for his innovative work. His inventions have advanced the technology used in semiconductor manufacturing.

Latest Patents

One of Hagiwara's latest patents is a method for fabricating an EUVL mask. This method involves etching a part of an absorption layer of an EUVL mask by allowing a charged particle to irradiate the absorption layer under the feed of a halogenated xenon gas. Following this, an oxidant is fed to the absorption layer to form an oxidized layer at the side surface that remains unetched. Another notable patent is a focused ion beam processing method designed to minimize damage to a workpiece during ion beam irradiation. This method includes generating an acceleration voltage between an ion source and the workpiece, focusing the ion beam, and applying it to a predetermined process position while maintaining the energy level of the ion beam within a specific range.

Career Highlights

Hagiwara has worked with notable companies such as Sii Nanotechnology Inc. and Seiko Instruments Inc. His experience in these organizations has allowed him to develop and refine his innovative techniques in lithography and ion beam processing.

Collaborations

Some of Hagiwara's coworkers include Tomokazu Kozakai and Osamu Takaoka. Their collaboration has contributed to the advancement of technologies in their respective fields.

Conclusion

Ryoji Hagiwara is a distinguished inventor whose work in extreme ultraviolet lithography and focused ion beam processing has made a significant impact on the semiconductor industry. His innovative methods and collaborations continue to shape the future of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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