The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2005
Filed:
Apr. 19, 2000
Applicants:
Ryoji Hagiwara, Chiba, JP;
Yoshihiro Koyama, Chiba, JP;
Inventors:
Ryoji Hagiwara, Chiba, JP;
Yoshihiro Koyama, Chiba, JP;
Assignee:
SII NanoTechnology Inc., Chiba, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J037/305 ;
U.S. Cl.
CPC ...
Abstract
A method is provided for repairing a phase shift mask. The phase shift mask has a substrate and a shifter containing a defect and disposed on the substrate. An ion beam is irradiated onto the defect while a region of the shifter that includes the defect is supplied with a first gas containing silicon, an oxidizing second gas, and a third gas for controlling an amount of ions from the ion beam which penetrate the region of the shifter to form a silicon thin film on the defect and thereby repair the phase shift mask.