The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 18, 2009

Filed:

Oct. 03, 2006
Applicants:

Ryoji Hagiwara, Chiba, JP;

Yasuhiko Sugiyama, Chiba, JP;

Tomokazu Kozakai, Chiba, JP;

Inventors:

Ryoji Hagiwara, Chiba, JP;

Yasuhiko Sugiyama, Chiba, JP;

Tomokazu Kozakai, Chiba, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/30 (2006.01); H01J 37/244 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is provided a focused ion beam processing method in which damage to a workpiece is minimized when the surface of the workpiece is irradiated and processed with an ion beam. The method comprises the steps of: generating an acceleration voltage between an ion source and a workpiece; focusing an ion beam emitted from the ion source; and applying the ion beam to a predetermined process position to process the surface of the workpiece. In this process, the energy level of the ion beam produced by the acceleration voltage is set within a range from at least 1 keV to less than 20 keV.


Find Patent Forward Citations

Hagiwara, Ryoji. (2009). Focused ion beam processing method (U.S. Patent No. 7576340). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7576340

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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