The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 19, 2011
Filed:
Mar. 03, 2009
Applicants:
Ryoji Hagiwara, Chiba, JP;
Osamu Takaoka, Chiba, JP;
Tomokazu Kozakai, Chiba, JP;
Inventors:
Assignee:
SII Nanotechnology Inc., , JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method for fabricating an extreme ultraviolet lithography (EUVL) mask. In an etching step, at least a part of an absorption layer of an EUVL mask is etched by allowing a charged particle to irradiate the absorption layer under feed of a halogenated xenon gas. In an oxidant feed step, an oxidant is fed to the absorption layer after the etching step to form an oxidized layer at a side surface of the absorption layer that is not etched during the etching step.