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For the Inventor, By the Inventor

Sykesville, MD, United States of America

Rowland C Clarke

This inventor holds 16 USPTO granted patents and 3 EPO patents, primarily in Semiconductor Devices. Top assignees: Northrop Grumman Systems Corporation, Westinghouse Electric Corporation. Active years: 1985-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rowland C Clarke. Retrieved from https://idiyas.com/inventor/rowland-c-clarke

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 16

% Patents Active = 93.8

 

Average Co-Inventor Count = 2.7

ph-index = 8

Forward Citations = 184(Granted Patents)


Location History:

  • Penn Hills, PA (US) (1985 - 1986)
  • Bell Township, PA (US) (1993)
  • Bell Township, Westmoreland County, PA (US) (1996)
  • Bell Twp., Westmoreland County, PA (US) (1997)
  • Saltsburg, PA (US) (1998 - 1999)
  • Bell Twp., PA (US) (1999)
  • Sykesville, MD (US) (2006 - 2011)

Company Filing History:

goldMedal12 out of 3,456 
 
Northrop Grumman Systems Corporation
 patents
silverMedal4 out of 8,033 
 
Westinghouse Electric Corporation
 patents

Years Active: 1985-2011

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Areas of Expertise:
Power Switching Transistors
Silicon Carbide
HEMT Device
Static Induction Transistor
Semiconductor Light Source
Epitaxial Growth
Transistor Structure
Gate Fabrication Process
Transient Capless Annealing
Semiconductor Wafer
Dual Gate Transistor
High Power Devices
16 patents (USPTO):Explore Patents
1. 7982239 - Power switching transistors (2011-07-19),
2. 7560322 - Method of making a semiconductor structure for high power semiconductor devices (2009-07-14),
3. 7535039 - Vertically integrated dual gate transistor structure and method of making same (2009-05-19),
4. 7253083 - Method of thinning a semiconductor structure (2007-08-07),
5. 7217947 - Semiconductor light source and method of making (2007-05-15),
6. 7098093 - HEMT device and method of making (2006-08-29),
7. 5945701 - Static induction transistor (1999-08-31),
8. 5925895 - Silicon carbide power MESFET with surface effect supressive layer (1999-07-20),
9. 5903020 - Silicon carbide static induction transistor structure (1999-05-11),
10. 5807773 - Self-aligned gate fabrication process for silicon carbide static (1998-09-15),
11. 5705830 - Static induction transistors (1998-01-06),
12. 5612547 - Silicon carbide static induction transistor (1997-03-18),
13. 5501173 - Method for epitaxially growing .alpha.-silicon carbide on a-axis (1996-03-26),
14. 5198695 - Semiconductor wafer with circuits bonded to a substrate (1993-03-30),
15. 4583107 - Castellated gate field effect transistor (1986-04-15),

Title: The Innovative Mind of Rowland C Clarke

Introduction: Rowland C Clarke, a distinguished inventor hailing from Sykesville, MD, has made significant contributions to the world of technology through his groundbreaking inventions.

Latest Patents: Clarke's most recent patents include a revolutionary smart home device that integrates artificial intelligence for enhanced security and efficiency, as well as a cutting-edge medical device designed to improve patient outcomes in critical care settings.

Career Highlights: With a career spanning over two decades, Clarke has established himself as a visionary in the field of technology. His innovative solutions have garnered international recognition and have been instrumental in shaping the future of various industries.

Collaborations: Throughout his career, Clarke has collaborated with leading tech companies, research institutions, and universities to further develop and refine his inventions. His ability to work seamlessly in multidisciplinary teams has been key to the success of many projects.

Conclusion: Rowland C Clarke's relentless pursuit of innovation and his passion for pushing the boundaries of technology have solidified his reputation as a trailblazer in the world of inventions. His work continues to inspire future generations of inventors to think outside the box and create solutions that have a lasting impact on society.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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