The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 11, 1999
Filed:
Jun. 18, 1997
Richard R Siergiej, Irwin, PA (US);
Anant K Agarwal, Monroeville, PA (US);
Rowland C Clarke, Saltsburg, PA (US);
Charles D Brandt, Mt. Lebanon, PA (US);
Northrop Grumman Corporation, , US;
Abstract
A static induction transistor having a silicon carbide substrate upon which is deposited a silicon carbide layer arrangement. The layer arrangement has a plurality of spaced gate regions for controlling current flow from a source region to a drain region vertically spaced from the source region by a drift layer. The pitch distance p between gate regions is 1 to 5 microns and the drift layer thickness d is also 1 to 5 microns. In one embodiment the source regions are positioned alternatively with the gate regions and are formed in a top layer of high doping concentration. In another embodiment the gate regions are ion implanted in the layer arrangement. In another embodiment the structure includes a dual oxide layer covering gate and source or drain regions, and in yet another embodiment contacts for the drain, source and gate regions are located on the same side of the substrate member.