The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 1996
Filed:
Oct. 18, 1993
Albert A Burk, Jr, Murrysville, PA (US);
Donovan L Barrett, Penn Hills Township, Allegheny County, PA (US);
Hudson M Hobgood, Murrysville, PA (US);
Rowland C Clarke, Bell Township, Westmoreland County, PA (US);
Graeme W Eldridge, Murrysville, PA (US);
Charles D Brandt, Mt. Lebanon, PA (US);
Westinghouse Electric Corporation, Pittsburgh, PA (US);
Abstract
A method for epitaxially growing a-axis .alpha.-SiC on an a-axis substrate is provided. A section is formed from the SiC crystal by making a pair of parallel cuts in the crystal. Each of these cuts is parallel to the c-axis of the crystal. The resulting section formed from the crystal has opposing a-face surfaces parallel to the c-axis of the crystal. A gas mixture having hydrocarbon and silane is passed over one of the a-face surfaces of the section. The hydrocarbon and silane react on this a-face surface to form an epitaxial layer of SiC. Preferably, the SiC is grown at a temperature of approximately 1450.degree. C.