The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 29, 2006
Filed:
Sep. 13, 2004
Applicants:
Rowland C. Clarke, Sykesville, MD (US);
Michael E. Aumer, Columbia, MD (US);
Inventors:
Rowland C. Clarke, Sykesville, MD (US);
Michael E. Aumer, Columbia, MD (US);
Assignee:
Northrop Grumman Corporation, Los Angeles, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/338 (2006.01);
U.S. Cl.
CPC ...
Abstract
A HEMT type device which has pillars with vertical walls perpendicular to a substrate. The pillars are of an insulating semiconductor material such as GaN. Disposed on the side surfaces of the pillars is a barrier layer of a semiconductor material such as AlGaN having a bandgap greater than that of the insulating material of the pillars. Electron flow is confined to a narrow channel at the interface of the two materials. Suitable source, drain and gate contacts are included for HEMT operation.