The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 19, 2011
Filed:
Jun. 13, 2007
Ty R. Mcnutt, Columbia, MD (US);
Eric J. Stewart, Silver Spring, MD (US);
Rowland C. Clarke, Sykesville, MD (US);
Ranbir Singh, South Riding, VA (US);
Stephen Van Campen, Clarksville, MD (US);
Marc E. Sherwin, Catonsville, MD (US);
Ty R. McNutt, Columbia, MD (US);
Eric J. Stewart, Silver Spring, MD (US);
Rowland C. Clarke, Sykesville, MD (US);
Ranbir Singh, South Riding, VA (US);
Stephen Van Campen, Clarksville, MD (US);
Marc E. Sherwin, Catonsville, MD (US);
Northrop Grumman Corporation, Los Angeles, CA (US);
Abstract
In an embodiment, a integrated semiconductor device includes a first Vertical Junction Field Effect Transistor (VJFET) having a source, and a gate disposed on each side of the first VJFET source, and a second VJFET transistor having a source, and a gate disposed on each side of the second VJFET source. At least one gate of the first VJFET is separated from at least one gate of the second VJFET by a channel. The integrated semiconductor device also includes a Junction Barrier Schottky (JBS) diode positioned between the first and second VJFETs. The JBS diode comprises a metal contact that forms a rectifying contact to the channel and a non-rectifying contact to at least one gate of the first and second VJFETs, and the metal contact is an anode of the JBS diode. A first electrical connection ties the gates of the first VJFET, the gates of the second VJFET, and the anode of the JBS diode to a common gate electrode and a second electrical connection ties the source of the first VJFET and the source of the second VJFET to a common source electrode.